11:45 〜 12:00
▼ [20a-W241-11] Observation of tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe
キーワード:spintronics,ferromagnetic semiconductor,tunneling magnetoresistance
In this study, we epitaxially grew trilayer structure composed of IV-group ferromagnetic semiconductor Ge1-xFex, MgO, and Fe, and successfully observed tunneling magnetoresistance. This result suggests that Ge1-xFex has spin-polarized carrier, and could be applied as spin injector and detector for Si and Ge.