2016年第63回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.3 GMR・TMR・磁気記録技術

[20a-W241-1~12] 10.3 GMR・TMR・磁気記録技術

2016年3月20日(日) 09:00 〜 12:15 W241 (西2・3号館)

小山 知弘(東大)

09:15 〜 09:30

[20a-W241-2] Large tunnel magnetoresistance in Co2FeAl/MgAl2O4/Co2FeAl junctions free from the band folding effect

〇(D)Scheike Thomas1,2、Sukegawa Hiroaki2、Inomata Koichiro2、Ohkubo Tadakatsu2、Hono Kazuhiro1,2、Mitani Seiji1,2 (1.Tsukuba Univ.、2.NIMS)

キーワード:TMR,MTJ,Heusler

Recently, we reported the fabrication of lattice-matched Heusler electrode Co2FeAl (CFA)/CoFe insertion/cation-disordered MgAl2O4/CoFe junctions and observed a relatively large tunnel magnetoresistance (TMR) ratio up to 281% at room temperature (RT). However, a large TMR ratio (exceeding 200%) using cation-ordered spinel barrier was yet to be achieved. In this talk, we show a large TMR ratio up to 342% at RT using a cation-ordered MgAl2O4 barrier and highly spin-polarized CFA top- and bottom-electrodes. The large TMR ratio in an ordered spinel barrier magnetic tunnel junction may be attributed to the achievement of nearly half-metallic CFA layers for both electrodes, which may effectively suppress the so-called band-folding effect.