[20a-W241-1~12] 10.3 GMR・TMR・磁気記録技術

▼ [20a-W241-4] Giant tunnel magnetoresistance using a cation-disorder MgAl₂O₄(001) epitaxial barrier deposited by a direct sputtering technique

〇(P)Belmoubarik Mohamed¹、Sukegawa Hiroaki¹、Ohkubo Tadakatsu¹、Mitani Seiji¹、Hono Kazuhiro¹ (1.NIMS)

キーワード：Spintronics,MTJ,oxide

In this study, we present the acheivement of ~245% of TMR at RT using cation-disorder MgAl₂O₄-barrier based MTJs with Fe electrodes. The barriers were deposited with a direct sputtering technique which produced high crystalline quality and perfect lattice-matched interfaces.