The 63rd JSAP Spring Meeting, 2016

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10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[20a-W241-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Sun. Mar 20, 2016 9:00 AM - 12:15 PM W241 (W2・W3)

Tomohiro Koyama(Univ. of Tokyo)

10:15 AM - 10:30 AM

▲ [20a-W241-6] Fabrication of a perpendicular-MTJ by utilizing an Ir/Co stack

〇Kay Yakushiji1,2, Hitoshi Kubota1, Akio Fukushima1, Shinji Yuasa1 (1.AIST, 2.PRESTO)

Keywords:STT-MRAM

To realize high scalability of STT-MRAM, we attempted to achieve high i-PMA by merging two i-PMA at both cobalt-on-iridium (Ir/Co) and FeB/MgO interface. The storage layer attains K_eff-t of above 0.9 erg/sqcm. Such high PMA is suitable for pushing STT-MRAM technology beyond the 20-nm node. At the same time, high magnetoresistance ratio (~100%) and low resistance-area product (~3 ohm-squm) were also achieved.