[20a-W241-1~12] 10.3 GMR・TMR・磁気記録技術

▲ [20a-W241-6] Fabrication of a perpendicular-MTJ by utilizing an Ir/Co stack

〇薬師寺 啓^1,2、久保田 均¹、福島 章雄¹、湯浅 新治¹ (1.産総研、2.さきがけ)

キーワード：STT-MRAM

To realize high scalability of STT-MRAM, we attempted to achieve high i-PMA by merging two i-PMA at both cobalt-on-iridium (Ir/Co) and FeB/MgO interface. The storage layer attains K_eff-t of above 0.9 erg/sqcm. Such high PMA is suitable for pushing STT-MRAM technology beyond the 20-nm node. At the same time, high magnetoresistance ratio (~100%) and low resistance-area product (~3 ohm-squm) were also achieved.