[20a-W241-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [20a-W241-7] Bias voltage and temperature dependence of magnetoresistance ratio in low resistance magnetic tunnel junctions with perpendicular magnetization

〇(M2)Sogo Oikawa¹, Nobuki Tezuka¹, Masashi Matsuura¹, Satoshi Sugimoto¹, Toshikazu Irisawa², Kazumasa Nishimura², Takuya Seino² (1.Tohoku Univ., 2.CANON ANELVA Corp.)

Keywords:spintronics,perpendicular magnetization