The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[20a-W611-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

Sun. Mar 20, 2016 9:00 AM - 12:15 PM W611 (W6)

Hiroshi Noge(Fukushima Univ.)

9:45 AM - 10:00 AM

[20a-W611-4] A method for removal of single-side doped layers of PERT solar cells

SIMAYI SHALAMUJIANG1, Yasuhiro Kida1, Katsuhiko Shirasawa1, Hidetaka Takato1 (1.AIST)

Keywords:Bifacial sola cell, spin etching, thermal diffusion

The PERT (passivated emitter rear totally diffused) solar cells fabricated by conventional thermal diffusion concept, one side experiences flatten step. In this study we have investigated a new procedure to maintain the textured pyramids on the both side of the PERT solar cells by using spin etching technique. Texture pyramids were observed by a laser microscope and SEM images of these doped layers before and after totally removed silicon wafers. Reflectance measurement was emplyed to compare the reflectance of flattened wafer and texture pyramids maintained wafer. A thermally diffused n-PERT solar cell was fabricated by the new procedure and the achieved front side efficiency is 19.0 % and 17.3 % for rear side. By optimizing the rear side emitter and its passivation as high as front side efficiency could be reached.