2016年第63回応用物理学会春季学術講演会

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一般セッション(口頭講演)

16 非晶質・微結晶 » 16.3 シリコン系太陽電池

[20a-W611-1~12] 16.3 シリコン系太陽電池

2016年3月20日(日) 09:00 〜 12:15 W611 (西6号館)

野毛 宏(福島大)

09:45 〜 10:00

[20a-W611-4] A method for removal of single-side doped layers of PERT solar cells

沙拉木江 司馬依1、木田 康博1、白澤 勝彦1、高遠 秀尚1 (1.(国研)産総研)

キーワード:Bifacial sola cell, spin etching, thermal diffusion

The PERT (passivated emitter rear totally diffused) solar cells fabricated by conventional thermal diffusion concept, one side experiences flatten step. In this study we have investigated a new procedure to maintain the textured pyramids on the both side of the PERT solar cells by using spin etching technique. Texture pyramids were observed by a laser microscope and SEM images of these doped layers before and after totally removed silicon wafers. Reflectance measurement was emplyed to compare the reflectance of flattened wafer and texture pyramids maintained wafer. A thermally diffused n-PERT solar cell was fabricated by the new procedure and the achieved front side efficiency is 19.0 % and 17.3 % for rear side. By optimizing the rear side emitter and its passivation as high as front side efficiency could be reached.