[20a-W611-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

[20a-W611-5] Emitter Fabrication Process for n-type Crystalline Silicon Solar Cell

〇Kunihiko Nishimura¹, Yumiko Kobayashi¹, Tatsuro Watahiki¹, Hidetada Tokioka¹ (1.Mitsubishi Elec.)

Keywords:solar cell,boron,BBr3

The relationship between Boron emitter depth profiles of n-type crystalline Si solar cells and open circuit voltage V_oc was derived by device simulation program. Then Boron emitter structures of various Boron profiles were fabricated by using thermal diffusion method with BBr₃ source, and the V_oc of them were measured respectively with passivation films. Therefore the suitable Boron profile fabrication method was revealed. Common problem of the surface Boron rich layer was solved by improving the additional annealing method.