[20a-W631-1~13] CS.4 6.6/12.2 Code-sharing session

[20a-W631-8] Local electrical investigation of the interface between the electrode and the organic grains using time-resolved electrostatic force microscopy

〇Tomoharu Kimura¹, Kei Kobayashi^1,2, Hirofumi Yamada¹ (1.Kyoto Univ., 2.Hakubi Center, Kyoto Univ.)

Keywords:organic semiconductor grain,metal-organic interface,electrostatic force microscopy

Organic field-effect transistors are heavily affected by the electrical characteristics at the interfaces between the metal electrode and each organic semiconducting grain. We investigate the static and dynamic electrical characteristics on various organic semiconducting grains using a combined method of time-resolved two applications of atomic force microscopy: frequency-modulation electrostatic force microscopy and scanning impedance microscopy.