[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-2] C-face epitaxy of 4H-SiC for Ultra-High Voltage Power Devices

〇Johji Nishio^1,2, Mitsuhiro Kushibe^1,2, Hirokuni Asamizu^2,3, Hidenori Kitai², Kazutoshi Kojima² (1.Toshiba R&D Center, 2.AIST, 3.ROHM)

Keywords:SiC,epitaxial,C-face

The epitaxial growth parameters which affect significantly to the background carrier concentration have been examined for C-face growth of 4H-SiC to realize lower background carrier concentration. The optimum parameter combination made it possible to achieve lower than 1 x10¹³ cm^-3 within a whole area of specular 3-inch wafer. In addition to this, the minority carrier lifetime improvement was tried by in-process annealing just after the epitaxial growth.