[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-H101-7] Consideration of oxide removal process in electrochemical etching of p-SiC

〇Taro Enokizono¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

Keywords:electrochemical etching,SiC,MEMS

Electrochemical etching (EC etching), which removes p-SiC selectivity, is one of essential process for SiC MEMS devices. In EC etching, uniform etching and anisotropy control of the etching are requested. For the purpose, it is important to understand the reaction mechanisms. We performed EC etching under constant current flow. We discuss oxide removal process during EC etching based on analysis of time change of applied voltage during etching.