[20p-H112-1~12] 15.5 Group IV crystals and alloys

[20p-H112-1] Influence of Strain in GeSiSn Layer on Crystallinity of GeSiSn/GeSn/GeSiSn Double-Heterostructure

〇Masahiro Fukuda¹, Takashi Yamaha^1,2, Takanori Asano^1,2, Syunsuke Fujinami¹, Yosuke Shimura¹, Masashi Kurosawa^1,3, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ, 2.JSPS Research Fellow, 3.IMass, Nagoya Univ.)

Keywords:semiconductor,double-heterostructure