[20p-H112-1~12] 15.5 Group IV crystals and alloys

[20p-H112-11] Homogeneous Bulk SiGe Crystals Grown by the TLZ Method
(1) Increase of Crystal Diameter and Improvement of Crystal Quality

〇Kyoichi Kinoshita¹, Yasutomo Arai¹ (1.JAXA)

Keywords:SiGe alloys,bulk crystal,substrate

We developed a new crystal growth method named as a traveling liquidus zone (TLZ) method and succeeded in growing homogeneous SiGe alloy crystals. We increased the grown crystal size and improved crystal quality for fabricating substrates used in high mobility electronic devices. Here, we report succesful growth of 2 inch Si0.5Ge0.5 bulk crystals with high quality.