Theoretical Investigation of Relationship between SiC/GaN Interface Structures and Bandoffset

Eiji Kojima; Kentaro Endo; Hiroki Shirakawa; Masaaki Araidai; Yasuhiro Ebihara; Takashi Kanemura; Shoichi Onda; Kenji Shiraishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

1:45 PM - 2:00 PM

[20p-H121-3] Theoretical Investigation of Relationship between SiC/GaN Interface Structures and Bandoffset

〇Eiji Kojima¹, Kentaro Endo¹, Hiroki Shirakawa¹, Masaaki Araidai¹, Yasuhiro Ebihara², Takashi Kanemura², Shoichi Onda², Kenji Shiraishi¹ (1.Nagoya Univ., 2.DENSO)

Keywords:SiC/GaN interface

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