4:00 PM - 6:00 PM
[20p-P13-7] Ion channeling study of β-FeSi2 /Si hetero-epitaxial structures
Keywords:beta-FeSi2,ion channeling,hetero-epitaxial growth
Epitaxy of β-FeSi2/Si(111) hetero-stuctures has been investigated by ion channeling. Axial ion channeling along Si<111> directions was observed and the average atomic displacement deduced from the minimum yield at the interface was very large. It is because atomic arrangement in β-FeSi2 is different from that in Si, tilt of crystal axes may take place, or in-plain mosaic structures may form.