The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.10 Compound solar cells

[20p-P14-1~23] 13.10 Compound solar cells

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P14 (Gymnasium)

4:00 PM - 6:00 PM

[20p-P14-16] Preparation of SnS thin films by close-space sublimation method

Masato Abe1, Aimi Yago1, Youji Akaki2, Hironori Katagiri1, Hideaki Araki1 (1.Nat. Inst. Tech., Nagaoka Coll., 2.Nat. Inst. Tech., Miyakonojo Coll.)

Keywords:SnS,thin film,close-space sublimation

Tin (Ⅱ) sulfide (SnS) is composed of elements that are inexpensive, non-toxic and abundant in the Earth's crust. It is a p-type semiconductor with a band gap energy of 1.3 eV. It is therefore a potential candidate for use as a solar cell absorber material. In this study, SnS thin films were prepared using a close-space sublimation (CSS) method. SnS thin films were grown on soda-lime glass (SLG) and Mo coated SLG,CdS coated FTO glass substrates by thermal sublimation in vacuum, using sources of SnS. The dependence of the structural and morphological properties of films deposited by CSS method on the source temperature was investigated.