The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.10 Compound solar cells

[20p-P14-1~23] 13.10 Compound solar cells

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P14 (Gymnasium)

4:00 PM - 6:00 PM

[20p-P14-7] Chemical Composition Dependence of Photoluminescence from Cu2ZnSnS4 Thin Film

Kunihiko Tanaka1, Shinya Miura1, Yoshiharu Takamatsu1 (1.Nagaoka Univ. Tech.)

Keywords:Cu2ZnSnS4(CZTS),Photoluminescence,chemical composition dependence

Photoluminescence from Cu2ZnSnS4 (CZTS) thin films, which was nearly stoichiometric, was investigated. The CZTS thin films were prepared by sulfurizing metal precursors which were deposited by sputtering method. PL spectra depend on temperature and excitation intensity was investigated. The thin films were excited by second harmonics of CW Nd3+:YVO4 laser (532 nm), and PL was dispersed by f=60mm polychromator and detected by Si-CCD. Three types of broad spectrum were observed. The PL spectra from all samples contained some peaks at ~1.2 eV, ~1.3 eV and 1.5 eV, and peak energies of the spectra were 1.2 eV (Group A=Zn/Sn>1), 1.3 eV (Group B=Zn/Sn<1, Cu/(Zn+Sn)<1), 1.5 eV (Group C= Zn/Sn<1, Cu/(Zn+Sn)>1), respectively. The origin of the peaks of ~1.2 eV, ~1.3 eV and 1.5 eV, were assigned to band-to-impurity (BI), band-to-tail (BT), band-to-band (BB), respectively. From spectra of Group B, estimated potential fluctuation was 25~30 meV.