[20p-P16-1~12] 15.3 III-V-group epitaxial crystals

[20p-P16-1] Crystalline evaluation of X-ray diffraction and Raman spectroscopy for GaAsN films varied growth temperature and supplied time of raw material and grown by atomic layer epitaxy

〇Hideaki Hashimoto¹, Kouji Maeda¹, Yuuki Yokoyama¹, Masaru Horikiri¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

Keywords:semiconductor,GaAsN film