[20p-P7-1~20] 9.2 Nanowires and Nanoparticles

[20p-P7-4] Effect of wet hydrogen exposure on electrical properties of GaAs nanowires prepared by anodic etching

〇Kohei Yamada¹, Shinya Aikawa¹, Hideki Hashimoto¹, Hidetaka Asoh¹, Sachiko Ono¹ (1.Kogakuin Univ.)

Keywords:anodic etching,GaAs,hydrogen exposure