2016年第63回応用物理学会春季学術講演会

講演情報

一般セッション(ポスター講演)

9 応用物性 » 9.2 ナノワイヤ・ナノ粒子

[20p-P7-1~20] 9.2 ナノワイヤ・ナノ粒子

2016年3月20日(日) 13:30 〜 15:30 P7 (屋内運動場)

13:30 〜 15:30

[20p-P7-6] Si Nanowire Formation using Al-Catalyst with Various Substrate Temperatures

Jevasuwan Wipakorn1、Fukata Naoki1 (1.NIMS)

キーワード:Nanowire,Silicon,Al-catalyst

Nanowires (NWs) have significantly attracted attention as building blocks for next generation devices including solar cells and field-effect transistors (FETs). VLS mechanism of chemical-vapor-deposition (CVD) technique suggests that the NW formation starts from the vapor phase diffusion through the liquid catalyst droplet and end up as solid wire. Owning to Au properties of nontoxicity, chemical stability, unoxidation in air, Au-catalyzed NW formations have already been reported. However, they are difficult to realize high performance devices due to Au contamination. In this study, we would like to propose Al which has been recently proposed as a new alternative catalyst to form SiNWs for solar cell and FET applications.