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△ [20p-P8-3] Analytical Study on a Common-Gate Quadruple-Dot Single-Electron-Pump with Asymmetric Gate Capacitances
Keywords:single electron device,pump operation
A common-gate quadruple-dot single-electron device with four asymmetric gate capacitances and uniform junction capacitances is analyzed.
The gate capacitance rate is assumed to 1.2:1.0:1.2:1.0. Negative voltage is applied to the drain and gate voltage is increased and decreased so that the operating point swings across the overlap between the stability regions corresponding to the electron configurations (0,0,0,0) and (0,0,1,0).Then an electron is transferred from the source to the drain, that means the pump operation is achieved.
The gate capacitance rate is assumed to 1.2:1.0:1.2:1.0. Negative voltage is applied to the drain and gate voltage is increased and decreased so that the operating point swings across the overlap between the stability regions corresponding to the electron configurations (0,0,0,0) and (0,0,1,0).Then an electron is transferred from the source to the drain, that means the pump operation is achieved.