2016年第63回応用物理学会春季学術講演会

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13 半導体 » 13.8 化合物及びパワー電子デバイス・プロセス技術

[20p-P9-1~22] 13.8 化合物及びパワー電子デバイス・プロセス技術

2016年3月20日(日) 13:30 〜 15:30 P9 (屋内運動場)

13:30 〜 15:30

[20p-P9-11] Fabrication of GaN Porous Structures Using Photo-Electrochemical Etching and Electrode Response

張 笑逸1、伊藤 圭亮1、喜田 弘文1、熊崎 祐介1、佐藤 威友1 (1.北大量集センター)

キーワード:Porous Structures,Photo-Electrochemical Etching

High-density nanostructures of GaN have been widely investigated for highly-electrochemical responses in chemical sensors, photoelectrodes and so on. Porous structure is one of the attractive nanostructures with the merit of high productivity over a large area and low damages during etching. In this study, the fabrication of porous structures by the electrochemical etching is reported and the electrochemical response of porous electrodes is measured as well.