[20p-S222-1~17] 21.1 Joint Session K

[20p-S222-9] Defects and Electronic Properties of Hydrogen-implanted ZnO Single Crystals

〇Takeo Ohsawa¹, Isao Sakaguchi¹, Shigenori Ueda¹, Naoki Ohashi¹ (1.NIMS)

Keywords:ZnO,Electronic properties,Hydrogen

It has been improved to create functional devices based on zinc oxides (ZnO). However, difficulties of defects and impurities still remain even in recent high purity ZnO single crystals. In this decade, it have been reported that hydrogen is a possible donor in ZnO from experimental and theoretical points of view. To reveal such complicated mechanism on conductivity of ZnO, we report defects and electronic properties of hydrogen-implanted ZnO single crystals.