[20p-S223-9~17] 13.9 Optical properties and light-emitting devices

[20p-S223-16] Photoluminescence properties from Eu³⁺ ions doped in ZnGa₂O₄ films

〇Housei Akazawa¹, Shinojima Hiroyuki² (1.NTT DIC, 2.Kurume NCT)

Keywords:ZnGa2O4,photoluminescence,Eu3+ ion

We have investigated photoluminescence of Eu³⁺ ions doped in ZnGa₂O₄ host films in terms of Ga/Zn composition ratios and annealing temperatures. Spectral features as well as optimized process conditions revealed striking contrast with ZnO host films.