[20p-S223-9~17] 13.9 Optical properties and light-emitting devices

△ [20p-S223-9] Controlling the emission of the Er luminescent center in GaAs –Introduction of Photonic crystal nanocavity-

〇Takanori Kojima¹, Kanji Sakuragi¹, Masayuki Ogawa¹, Natsuki Fujioka¹, Atsushi Koizumi¹, Susumu Noda², Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Kyoto Univ.)

Keywords:photonic crystal,rare earth

We have successfully demonstrated the world’s first Er emission from Er,O-codoped GaAs (GaAs:Er,O) by current injection at room temperature using a InGaP/GaAs:Er,O/InGaP light-emitting diode (LED) structure. One of our research goals is to realize a laser action exhibiting temperature-independent oscillation wavelength. In order to achieve the action, we have investigated precisely Er emission properties in GaAs:Er,O. In this contribution, we fabricated a photonic crystal structure on a GaAs:Er,O slab to modulate the emission from Er ions, and found a drastic enhancement of the emission intensity in a nanocavity, which was much larger than that predicted by numerical simulation.