[20p-S321-1~16] 3.13 Semiconductor optical devices

[20p-S321-11] Low temperature lasing characteristics of GaInAsP-InP double-hetero laser on wafer bonded InP/Si substrate

〇Tetsuo Nishiyama¹, Keiichi Matsumoto¹, Junya Kishikawa¹, Toshiki Sukigara¹, Yuya Onuki¹, Naoki Kamada¹, Tomokazu Kanke¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:laser,wafer direct bonding,MOVPE