[20p-S321-1~16] 3.13 Semiconductor optical devices

[20p-S321-5] Higher Dot Density Effect on Thinner Barrier Layer and Higher Modulation Response of the Quantum Dot Lasers

〇Takeo Kageyama¹, Huy V. Q.², Katsuyuki Watanabe², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. Tokyo, 2.IIS, Univ. Tokyo, 3.QD Laser)

Keywords:semiconductor laser,quantum dot,high speed modulation

We have realized highest modulation bandwidth f_3dB of small-signal modulation response up tp 13.1 GHz (25°C), 8.8GHz (85°C) as long-wavelength quantum dot lasers by using simple technology "higher density effect of QDs" to realize thinner barrier layer without changing MBE machine setup and employing new sources like strain-compensation technology.