[20p-S321-1~16] 3.13 Semiconductor optical devices

△ [20p-S321-8] High Modulation Efficiency Operation of GaInAsP/InP Membrane DFB Laser on Si Substrate

〇(D)Daisuke Inoue¹, Takuo Hiratani¹, Kai Fukuda¹, Takahiro Tomiyasu¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (1.Tokyo Tech., 2.QNERC)

Keywords:semiconductor laser,membrane laser,laser on sillicon

We fabricated membrane DFB laser on a silicon substrate for on-chip optical interconnect. The device shows a low threshold current (0.21 mA) single-mode operation, and high modulation efficiency of 11 GHz/mA^1/2, which is, to the best of our knowledge, the highest value among those reported for DFB lasers.