[20p-S321-1~16] 3.13 Semiconductor optical devices

△ [20p-S321-9] Initial Reliability of GaInAsP/InP Membrane DFB Laser on Si Substrate

〇Kai Fukuda¹, Daisuke Inoue¹, Takuo Hiratani¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (1.Tokyo Tech., 2.QNERC)

Keywords:semiconductor laser,membrane laser,laser on sillicon

For a light source in on-chip optical interconnection, we have proposed membrane DFB lasers.In this work , we evaluated initial reliability of membrane DFB Laser integrated with a butt-jointed built-in (BJB) passive waveguide and confirmed that it works stably for 310 hours.