[20p-S421-1~12] 17.3 Layered materials

△ [20p-S421-2] Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride

〇Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio^1,3 (1.Tokyo Univ., 2.NIMS, 3.PRESTO-JST)

Keywords:breakdown,h-BN,absorbed water

Hexagonal boron nitride (h-BN) is considered as ideal gate dielectric and substrate for graphene and other 2D material devises. We have found that the dielectric breakdown in c axis direction using a conductive atomic force microscope proceeded in the layer-by-layer manner. The obtained dielectric breakdown strength was ~12 MV/cm. Although, the dielectric breakdown strength attributed to crystal structure is main characteristic of h-BN, it has not been clarified yet. In this study, the anisotropic dielectric breakdown of h-BN is studied.