[20p-S421-1~12] 17.3 Layered materials

[20p-S421-9] Ballistic Modeling of Silicane and Germanane CMOS Transistors

〇SHIROU KANEKO¹, Naosuke Oka¹, Hideaki Tsuchiya¹, Matsuto Ogawa¹ (1.Kobe Univ.)

Keywords:Silicane,Germanane,CMOS

This research is analysis of band structures of Silicane and Germanane, hydrogen-terminated monolayers of Si/Ge and CMOS characteristics by using them under ballistic transport. In result, the band structures coincided well with those of ab initio calculation. In addition, superiority or inferiority between these materials of the current value changed dependently on device condition. In presentation, introducing these results and consideration is scheduled.