[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

[20p-S422-12] Demonstration of GaAsSb/InGaAs vertical tunneling FETs

〇(D)Takahiro Gotow^1,3, Manabu Mitsuhara^2,3, Takuya Hoshi^2,3, Hiroki Sugiyama^2,3, Mitsuru Takenaka^1,3, Shinichi Takagi^1,3 (1.U-Tokyo, 2.NTT, 3.JST CREST)

Keywords:tunneling FET,GaAsSb,InGaAs

Tunneling FETs have recently attracted a great deal of interest because of its potential of allowing the realization of FETs with superior switching behavior compared to conventional MOSFETs. Hetero-junctions such as GaAsSb/InGaAs has small effective mass and can be made small effective band-gaps in source/channel region. In this time, GaAsSb/InGaAs vertical TFETs were demonstrated with ON/OFF ratio ~10⁴ and SSmin ~ 80mV/dec at V_D=50mV and 20K.