Stability and Tunneling Current of Isoelectronic Impurity Complexes in Si-TFET; First-principles Study

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Sun. Mar 20, 2016 1:45 PM - 6:30 PM S422 (S4)

Keiji Ikeda(TOSHIBA), Jiro Ida(Kanazawa Inst. of Tech.)

6:15 PM - 6:30 PM

〇Shota Iizuka¹, Yoshihiro Asayama¹, Akito Nagasawa¹, Takashi Nakayama¹ (1.Chiba Univ.)

Keywords:Tunnel FET,Isoelectronic Impurity Complex,First-principles Calculation