Electrical Characteristics of SiC Schottky Diodes with WC and W<sub>2</sub>C Electrodes

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 9:00 AM - 12:00 PM H101 (H)

Takuji Hosoi(Osaka Univ.)

11:30 AM - 11:45 AM

〇(M1)Tomoyuki Suzuki¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

Keywords:Silicon carbide,Tungsten carbide,Schottky diode