[21a-H101-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [21a-H101-11] Mapping of Ni/p-3C-SiC Shottky contacts by using scanning internal photoemission microscopy

〇Masato Shingo¹, Naoto Ichikawa², Masashi Kato², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

Keywords:scanning internal photoemission microscopy,3C-SiC,Schottky contact

We demonstrated two-dimensional characterization of Ni/p-3C-SiC Schottky contacts by scanning internal photoemission microscopy. The 3C-SiC surface forms deep grooves of in the domain boundary, the same pattern was also obtained in a photocurrent image. These results can tell us that, this technique is possible to visualize the inhomogeneity of the interface due to crystal quality.