[21a-H111-1~11] 6.3 Oxide electronics

[21a-H111-2] Epitaxial Growth of NbON (100) Thin Films and Reduction of Residual Carrier Concentration for Visible Light-Responsive Photocatalysts

〇Ryosuke Kikuchi¹, Toru Nakamura¹, Satoru Tamura¹, Hideaki Murase¹, Kazuhito Hato¹ (1.Panasonic Corp.)

Keywords:photocatalyst,niobium oxynitride,sputtering

Niobium oxynitride (NbON), which has a baddeleyite structure, has potential as a semiconductor photocatalyst for direct water splitting using visible light. Our previous study has shown the deposition of polycrystalline NbON films by RF reactive sputtering. In this study, we demonstrate the epitaxial growth of NbON(100) films on rutile-structure titanium dioxide (r-TiO₂)(101) substrates. Application of the 2-step growth method enabled us to successfully suppress anion vacancies and to reduce the residual carrier concentration in the NbON films due to decreasing the growth temperature.