[21a-H112-3~11] 15.3 III-V-group epitaxial crystals

[21a-H112-11] Molecular Beam Epitaxy and Laser Characterization of Quantum Dot Multilayer with Thinner Barrier by Means of Higher Dot Density Effect

〇Takeo Kageyama¹, Huy V.Q.², Katsuyuki Watanabe², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. Tokyo, 2.IIS, Univ. Tokyo, 3.QD Laser)

Keywords:quantum dot,semiconductor laser,molecular beam epitaxy

We have showed the suppression of vertical alignment of quantum dot by higher dot density effect without change in MBE setup and introduction of new sources at last JSAP for the first time. Here we report the realization of the multiple stacked quantum dot structures grown by MBE with thinner barrier layer by using higher dot density effect. Lasing characteristics will be also shown.