[21a-H112-3~11] 15.3 III-V-group epitaxial crystals

[21a-H112-7] PL properties at RT of InAs Quantum Dots for Near-infrared broadband light source

〇Yoshinori Sawado¹, Katsumi Yoshizawa¹, Kouichi Akahane², Naokatsu Yamamoto² (1.PioneerMTC, 2.NICT)

Keywords:quantum dots,MBE,near-infrared light source

We have studied Near-infrared light source that consists of semiconductor quantum dots structure for many applications in the 1.0 - 1.3 um waveband. We have proposed light source structure containing InAs quantum dots fabricated on ultra-thin GaAs layer by SSNS(sandwiched sub-nano structure) growth technique. In this study, we succeeded in shortening PL wavelength from the light source structure drastically because of additional treatment on SSNS GaAs layer.