[21a-H112-3~11] 15.3 III-V-group epitaxial crystals

[21a-H112-9] An extended emission wavelength of InAs quantum dot grown on InP substrate by using dot in well structure

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Keita Hashimoto², Hiroshi Takai² (1.NICT, 2.TDU)

Keywords:quantum dot,molecular beam epitaxy,mid-infrared

In this study, we fabricated dot in well (DWell) structure for InAs quantum dot (QD) grown on InP substrate. The emission wavelength was extended to longer region with increasing thickness of quantum well of DWell. The longest peak wavelength of QDs emission at 1840 nm was obtained.