Fabrication of crack-free freestanding GaN substrates by dissolution of sapphire substrates in Na-flux method

Takumi Yamada; Masayuki Imanishi; Kosuke Nakamura; Kosuke Murakami; Hiroki Imabayashi; Daisuke Matsuo; Masatomo Honjo; Mihoko Maruyama; Mamoru Imade; Masashi Yoshimura; Yusuke Mori

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-H121-1~11] 15.4 III-V-group nitride crystals

Mon. Mar 21, 2016 8:45 AM - 11:45 AM H121 (H)

Motoaki Iwaya(Meijo Univ.), Makoto Saito(Tohoku Univ.)

9:15 AM - 9:30 AM

△ [21a-H121-3] Fabrication of crack-free freestanding GaN substrates by dissolution of sapphire substrates in Na-flux method

〇(M1)Takumi Yamada¹, Masayuki Imanishi¹, Kosuke Nakamura¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Daisuke Matsuo¹, Masatomo Honjo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Grad. Sch. of Eng., Osaka Univ.)

Keywords:GaN

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