[21a-S011-1~12] 17.2 Graphene

[21a-S011-10] Origin of band-like transport in highly crystalline graphene films from graphene oxides

〇Ryouta Negishi¹, Takahiro Ito², Masashi Nakatake³, Masashi Akabori⁴, Yoshio Watanabe³, Yoshihiro Yobayashi¹ (1.Osaka Univ., 2.Nagoya Univ., 3.Aichi SR, 4.JAIST)

Keywords:graphene,graphene oxide,electrical properties

In previous study, we achieve to synthesize the highly crystalline graphene films showing band-like transport from defective graphene oxide by high temperature treatments in ethanol environment above 1000°C. In this study, we investigate the occupied and unoccupied states in the graphene films using X-ray absorption fine structure and photoelectron spectroscopy measurements, and reveal that the origin of band-like transport in the highly crystalline graphene films is caused by changing density of states near Fermi level with the restoration of graphitic structure in the graphene films.