[21a-S011-1~12] 17.2 Graphene

[21a-S011-11] Degradation of graphene of hydrogen-intercalated graphene/SiC(0001)
- Gradual oxidation at the interface induced by current apply –

〇Fumihiko Maeda^1,2, Makoto Takamura², Hiroki Hibino^3,2 (1.Fukuoka Inst. Tech., 2.NTT BRL, 3.Kwansei Gakuin Univ.)

Keywords:epitaxial graphene,interface,mobility measurements

A quasi-free standing (QFS) graphene has been achieved by terminating Si dangling bonds at the interface by hydrogen. However, the expected performance for QFS graphene has not been reached. To clarify the factor for the mobility degradation, we analyzed the surfaces and found that Si atoms at the interface oxidized after the mobility measurements while this oxidation is very gradual reaction. This suggest that the current apply induces defect in graphene overlayer and, successively, Si at the interface oxidized gradually.