[21a-S011-1~12] 17.2 Graphene

[21a-S011-2] Non-local resistance in zero magnetic field in hBN/graphene/hBN structures

〇(PC)Katsuyoshi Komatsu^1,2, Eiichiro Watanabe¹, Daiju Tsuya¹, Kenji Watanabe¹, Takashi Taniguchi¹, Satoshi Moriyama¹ (1.NIMS, 2.Titech)

Keywords:graphene,valleytronics

In 2D atomic layer materials with hexagonal lattice structure have valley degeneracy in addiction to spin degeneracy. If we could use the valley degree of freedom, valleytronics device that uses non-dissipative valley current would be achieved. We made an equipment that allows accurate alignment of two different atomic layers to make heterostructures. The carrier mobility reached 150,000 cm²/Vs. In non-local resistance measurement, we could observe giant non-local resistance at secondary Dirac point even in zero magnetic field.