The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[21a-S223-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 9:00 AM - 12:30 PM S223 (S2)

Takashi Suemasu(Univ. of Tsukuba), Yoshikazu Terai(Kyushu Inst. of Tech.)

9:45 AM - 10:00 AM

[21a-S223-4] Reduction of BaSi2 surface contact resistance by inserted a-Si layers

〇Suguru Yachi1, Hiroki Takeuchi1, Ryota Takabe1, Kaoru Toko1, Takashi Suemasu1,2 (1.Univ. Tsukuba, 2.JST-CREST)

Keywords:contact resistance