[21a-S223-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

△ [21a-S223-6] Study of band structure of Cr-doped AlN by photoelectron spectroscopy

〇(M1)Nobuyuki Tatemizo¹, Saki Sonoda¹, Hiroyuki Yamane², Kiyohisa Tanaka² (1.KIT, 2.IMS)

Keywords:photoelectron spectroscopy,AlN,3d transition metal

Cr doped AlN thin films are expected to have capability of ultra-wideband photoelectric conversion corresponding to ultraviolet - visible - infrared lights by its multi-band gap structure. To clarify the band structure of the Cr doped AlN, we investigated the valence band spectrum by photoelectron spectroscopy (PES) and the potential energy of the highest occupied molecular orbital by photoelectron yield spectroscopy (PYS). It is revealed that new electronic occupied states are formed in the forbidden band of AlN, which their main component is Cr3d orbital.