[21a-S323-1~11] 9.3 Nanoelectronics

[21a-S323-10] Nanoparticle Single-Electron Transistor with Floating Gate Electrode

〇Yasuo Azuma¹, Masanori Sakamoto², Toshiharu Teranishi², Yutaka Majima¹ (1.Tokyo Tech., 2.Kyoto Univ.)

Keywords:Single-electron transistor,Nanoparticle

The bottom-up technology for nanoscale electronic devices and their assemblies based on chemical interaction is a promising approach to realizing future electronics. We have demonstrated chemically assembled SETs consisting of self-terminated electroless-gold plated nanogap electrodes, containing self-assembled monolayers (SAMs), with synthesized Au nanoparticles positioned between the electrodes. Chemically assembled SETs exhibit ideal rhombic Coulomb diamonds. We have also fabricated chemically assembled SETs with double-gate electrodes and demonstrated all two-input logic operation. Here, we demonstrate memory operations in Au nanoparticle SETs fabricated by chemical assembling using nanogap electrodes and chemisorbed Au nanoparticles.