The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

9 Applied Materials Science » 9.3 Nanoelectronics

[21a-S323-1~11] 9.3 Nanoelectronics

Mon. Mar 21, 2016 9:15 AM - 12:15 PM S323 (S3)

Yoshinao Mizugaki(UEC)

11:45 AM - 12:00 PM

[21a-S323-10] Nanoparticle Single-Electron Transistor with Floating Gate Electrode

Yasuo Azuma1, Masanori Sakamoto2, Toshiharu Teranishi2, Yutaka Majima1 (1.Tokyo Tech., 2.Kyoto Univ.)

Keywords:Single-electron transistor,Nanoparticle

The bottom-up technology for nanoscale electronic devices and their assemblies based on chemical interaction is a promising approach to realizing future electronics. We have demonstrated chemically assembled SETs consisting of self-terminated electroless-gold plated nanogap electrodes, containing self-assembled monolayers (SAMs), with synthesized Au nanoparticles positioned between the electrodes. Chemically assembled SETs exhibit ideal rhombic Coulomb diamonds. We have also fabricated chemically assembled SETs with double-gate electrodes and demonstrated all two-input logic operation. Here, we demonstrate memory operations in Au nanoparticle SETs fabricated by chemical assembling using nanogap electrodes and chemisorbed Au nanoparticles.