[21a-S422-1~10] 13.5 Semiconductor devices and related technologies

△ [21a-S422-10] Channel Electron Effective Mass Dependence of Source-Drain Direct Tunneling Current in III-V n-MOSFETs with Sub-10 nm Gate Lengths

〇(M1)Shinya Katagi¹, Masaki Ohmori¹, Hideaki Tsuchiya¹, Matsuto Ogawa¹ (1.Kobe Univ.)

Keywords:source-drain direct tunneling currentr,III-V nMOSFET,Wigner Monte Carlo method