[21a-S422-1~10] 13.5 Semiconductor devices and related technologies

[21a-S422-4] [Silicon Technology Division Award Speech] In-situ TEM observation of conductive filament formation and erasure in CBRAMs

〇Masaki Kudo¹, Masashi Arita², Yuuki Ohno³, Yasuo Takahashi² (1.Hokkaido Univ. (curt. Kyushu Univ.), 2.Hokkaido Univ., 3.Hokkaido Univ. (curt. Mitsubishi Motors Corp.))

Keywords:ReRAM,in-situ TEM,Transmission Electron Microscope

The resistive switching mechanism of CBRAMs are thought to be by the formation and erasure cycle of conductive filaments. By using the in-situ TEM method, observation of inner structural changes is possible during resistive switching, which allows us to confirm the mechanism. In this work, we fabricated CBRAM devices for in-situ TEM which operate the same as conventional CBRAM cells, and observed the inner structural changes during reproducible resistive switching.